University of Barcelona

Overall presentation

The activities at EME include: synthesis of materials and structures (semiconductors, dielectrics, thin and thick films, nanostructures); technology and devices (CMOS technology and devices, deposition, ion implantation, thick film technology, Si compatible optoelectronic and photonic devices); characterisation (structural, optical, surface analysis, electro-optical, electrical) of materials and devices; design, fabrication and test of sensors and actuators for advanced instrumentation; nanotechnology and nanodevices. Among the facilities of UB-EME include: 1) Raman, infrared and UV-VIS spectroscopies (conventional and FTIR); 2) Tools for surface and thin film analysis (XPS-UPS, SIMS, SEM); 3) Nanoscopic tools for fabrication and characterisation (AFM, FIB, NIL, Hot Embossing)); 4) Luminescence (PL, PLE, EL) time- and frequency- resolved; 5) Waveguide characterisation set-ups for losses and gain. It is associated to the National Microelectronics Center (CNM) and it has access to a complete BiCMOS line with 2 m design rule, especially devoted to microsystems and WGs.

Activities within HELIOS

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UB-EME is involved in WP11 and its main role in the HELIOS project is the development of Si-nc sources and amplifiers.

And the UB-EME specifics tasks into WP11 are:

Electrical behaviour study of test LED structures for bipolar and unipolar injection.
Design of new test devices with multilayered gate stacks and additional injection structures to achieve high EL.
Development of first injection laser.

Further information

For further information, please contact:
Blas Garrido: + 34 934 03 91 51 ( blas[at]el.ub.es )
Olivier Jambois: + 34 934 03 91 76 ( ojambois[at]el.ub.es )

Experimental setup for EL

EFTEM imaging of the gate stack

Direct gate modulation of Si-nc's EL